Metal oxide semiconductor device having recess and manufacturing method thereof

ABSTRACT

The present invention provides a MOS (Metal-Oxide-Silicon) device and a manufacturing method thereof. The MOS device includes: a semiconductor substrate, a gate, a source, a drain, and two LDDs (Lightly-Doped-Drains). At least one recess is formed at an upper surface of the semiconductor substrate. The recess has a depth which is deeper than the depth of the two LDDs. The recess is filled with a conductive material. A vertical connection portion is formed at a boundary of the recess in the vertical direction, to at least connect one of the LDDs to the drain. The LDD closer to the drain is not laterally in contact with the drain but is connected to the drain by the vertical direction.

CROSS REFERENCE

The present invention claims priority to TW 106100099, filed on Jan. 4,2017.

BACKGROUND OF THE INVENTION Field of Invention

The present invention relates to a metal oxide semiconductor (MOS)device having recess and a manufacturing method thereof; particularly,it relates to such a MOS device having a reduced electric field tosuppress the hot carrier effect, whereby the substrate current generateddue to the hot carrier effect is suppressed without affecting thethreshold voltage and the ON-resistance, and a manufacturing method ofthe MOS device.

Description of Related Art

Please refer to FIGS. 1A-1E, which show, by cross-section views,manufacturing process steps of a prior art N-type MOS device. As shownin FIGS. 1A-1E, first, isolation structures 12 al and 12 ar are formedin a substrate 11 to define a device region 100; and a P-type well 12 b,a gate 13, a lightly doped diffusion (LDD) 14, a source 15 a and a drain15 b are formed in the device region 100. The P-type well 12 b can bethe substrate 11 itself if the substrate 11 is P-type. The gate 13includes a dielectric layer 13 a, an electrode layer 13 b and a spacerlayer 13 c. The LDD 14, the drain 15 b and the source 15 a are formed bya lithography process and an ion implantation process, wherein thelithography process defines the implantation regions, and the ionimplantation process implants N-type impurities to the defined regions.

This prior art N-type MOS device has a drawback: because theconcentration of the N-type impurities of the source 15 a and the drain15 b is higher than the concentration of the N-type impurities of thetwo LDDs 14, and because the source 15 a and the drain 15 b are incontact with the two LDDs 14 respectively in the lateral direction,certain N-type impurities in the source 15 a will diffuse to the LDD 14connected to the source 15 a. As a result, when an electric field isapplied, a hot carrier effect will occur to lower the threshold voltage(Vt) of this prior art N-type MOS device, such that the device cannotoperate as designed.

In view of the above, to overcome the drawback in the prior art, thepresent invention proposes a MOS device having recess and amanufacturing method thereof, which are capable of reducing the electricfield to suppress hot carrier effect, whereby the substrate currentgenerated due to the hot carrier effect is suppressed without affectingthe threshold voltage and the ON-resistance of the MOS device.

SUMMARY OF THE INVENTION

From one perspective, the present invention provides a MOS device,comprising: a semiconductor substrate, in which are formed a pluralityof isolation structures substantially parallel to each other in alongitudinal direction, to define a device region, the semiconductorsubstrate having an upper surface and a lower surface opposing to eachother in a vertical direction, wherein a first recess and a secondrecess are formed on the upper surface, the first recess and the secondrecess being substantially parallel to each other in the longitudinaldirection; a gate, which is in the device region and on the uppersurface of the semiconductor substrate; a source and a drain, which areat different sides of the gate, respectively; two lightly dopeddiffusions (LDDs) having a same conductive type as the source and thedrain, which are at different sides of the gate, respectively; twovertical connection portions which connect the two LDDs to the sourceand the drain, respectively; and contacts formed by a conductivematerial in the first recess and the second recess, respectively,wherein, viewing from a cross-section view, the first recess and thesecond recess are at different sides of the gate and are located betweenthe gate and one of the isolation structures, respectively; wherein, thefirst recess, in a lateral direction, has a first boundary closer to thegate and a second boundary farther from the gate, and the second recess,in the lateral direction, has a third boundary closer to the gate and afourth boundary farther from the gate, the vertical connection portionof the source being formed at the first boundary of the first recess inthe vertical direction, while the vertical connection portion of thedrain being formed at the third boundary of the second recess in thevertical direction; wherein, the first boundary and the third boundary,in the lateral direction, do not extend beneath the gate; wherein, fromthe cross-section view, the first recess and the second recess haverespective depths, and the two LDDs have a depth, and the depths of thefirst recess and the second recess are both deeper than the depth of thetwo LDDs; wherein, depth is defined as a distance extending from theupper surface of the semiconductor substrate downward in the verticaldirection; and wherein, the longitudinal direction, vertical directionand lateral direction are perpendicular to one another.

From another perspective, the present invention provides a manufacturingmethod of a MOS device, comprising the steps of: providing asemiconductor substrate, and forming a plurality of isolation structuressubstantially parallel to each other in a longitudinal direction of thesemiconductor substrate to define a device region, the semiconductorsubstrate having an upper surface and a lower surface opposing to eachother in a vertical direction; forming a gate in the device region andon the upper surface of the semiconductor substrate; etching the uppersurface in the longitudinal direction, so that a first recess and asecond recess are formed on the upper surface, wherein the first recessand the second recess are substantially parallel to each other in thelongitudinal direction; forming two lightly doped diffusions (LDDs)having a same conductive type as the source and the drain at differentsides below the gate, respectively; forming a source and a drain atdifferent sides of the gate; forming two vertical connection portionswhich connect the two LDDs to the source and the drain, respectively;and filling a conductive material into the first recess and the secondrecess, respectively, to form contacts; wherein, viewing from across-section view, the first recess and the second recess are atdifferent sides of the gate and are located between the gate and one ofthe isolation structures, respectively; wherein, the first recess, in alateral direction, has a first boundary closer to the gate and a secondboundary farther from the gate, and the second recess, in the lateraldirection, has a third boundary closer to the gate and a fourth boundaryfarther from the gate, the vertical connection portion of the sourcebeing formed at the first boundary of the first recess in the verticaldirection, while the vertical connection portion of the drain beingformed at the third boundary of the second recess in the verticaldirection; wherein, the first boundary and the third boundary, in thelateral direction, do not extend beneath the gate; wherein, from thecross-section view, the first recess and the second recess haverespective depths, and the two LDDs have a depth, and the depths of thefirst recess and the second recess are both deeper than the depth of thetwo LDDs; wherein, depth is defined as a distance extending from theupper surface of the semiconductor substrate downward in the verticaldirection; and wherein, the longitudinal direction, vertical directionand lateral direction are perpendicular to one another.

In one embodiment, the two LDDs are not laterally in contact with thesource and the drain, respectively.

In one embodiment, from the cross-section view, the respective depths ofthe first recess and the second recess are not deeper than a depth ofthe isolation structures.

In one embodiment, from the cross-section view, the respective depths ofthe first recess and the second recess are not deeper than 5000 Å.

In one embodiment, the isolation structures include local oxidation ofsilicon (LOCOS) structures or shallow trench isolation (STI) structures.

From yet another perspective, the present invention provides a MOSdevice, comprising: a semiconductor substrate, in which are formed aplurality of isolation structures substantially parallel to each otherin a longitudinal direction, to define a device region, thesemiconductor substrate having an upper surface and a lower surfaceopposing to each other in a vertical direction, wherein a recess isformed on the upper surface; a gate, which is in the device region andon the upper surface of the semiconductor substrate; a source and adrain, which are at different sides of the gate, respectively; twolightly doped diffusions (LDDs) having a same conductive type as thesource and the drain, which are at different sides of the gate,respectively; a vertical connection portion which connects one of thetwo LDDs to the drain; and a contacts formed by a conductive material inthe recess, wherein, viewing from a cross-section view, the recess is atone side of the gate and is located between the gate and one of theisolation structures; wherein, the recess, in a lateral direction, has afirst boundary closer to the gate and a second boundary farther from thegate, the vertical connection portion being formed at the first boundaryof the recess in the vertical direction, and wherein the first boundary,in the lateral direction, does not extend beneath the gate; wherein therecess has a depth which is deeper than a depth of one of the two LDDswhich is at the same side as the drain; wherein, depth is defined as adistance extending from the upper surface of the semiconductor substratedownward in the vertical direction; and wherein, the longitudinaldirection, vertical direction and lateral direction are perpendicular toone another.

From still another perspective, the present invention provides amanufacturing method of a MOS device, comprising the steps of: providinga semiconductor substrate, and forming a plurality of isolationstructures substantially parallel to each other in a longitudinaldirection of the semiconductor substrate to define a device region, thesemiconductor substrate having an upper surface and a lower surfaceopposing to each other in a vertical direction; forming a gate in thedevice region and on the upper surface of the semiconductor substrate;etching the upper surface in the longitudinal direction, so that arecess is formed on the upper surface; forming two lightly dopeddiffusions (LDDs) having a same conductive type as the source and thedrain at different sides below the gate, respectively; forming a sourceand a drain at different sides of the gate; forming a verticalconnection portion which connects one of the two LDDs to the drain; andfilling a conductive material into the recess to form a contact;wherein, viewing from a cross-section view, the recess is at one side ofthe gate and is located between the gate and one of the isolationstructures; wherein, the recess, in a lateral direction, has a firstboundary closer to the gate and a second boundary farther from the gate,the vertical connection portion being formed at the first boundary ofthe recess in the vertical direction, and wherein the first boundary, inthe lateral direction, does not extend beneath the gate; wherein therecess has a depth which is deeper than a depth of one of the two LDDswhich is at the same side as the drain; wherein, depth is defined as adistance extending from the upper surface of the semiconductor substratedownward in the vertical direction; and wherein, the longitudinaldirection, vertical direction and lateral direction are perpendicular toone another.

In one embodiment, one of the two LDDs which is at the same side as thedrain is not laterally in contact with the drain, and wherein anotherone of the two LDDs which is at the same side as the source is laterallyin contact with the source.

In one embodiment, the depth of the recess is not deeper than a depth ofthe isolation structures.

In one embodiment, the depth of the recess is not deeper than 5000 Å.

The objectives, technical details, features, and effects of the presentinvention will be better understood with regard to the detaileddescription of the embodiments below, with reference to the attacheddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1E show, by cross-section views, manufacturing process steps ofa prior art N-type MOS device.

FIGS. 2A-2G show a first embodiment according to the present invention.

FIGS. 3A-3G show another embodiment according to the present invention.

FIG. 4 shows a diagram of dopant concentration profile of a prior artN-type MOS device 10 corresponding to FIG. 1E.

FIG. 5 shows a diagram of dopant concentration profile of a MOS device20 according to the present invention, which corresponds to FIG. 2G.

FIG. 6 shows a diagram of dopant concentration profile of a MOS device30 according to the present invention, which corresponds to FIG. 3G.

FIG. 7 shows that the present invention, as compared to the prior art,is capable of reducing substrate current.

FIG. 8 shows a comparison of the ON-resistances of the present inventionand the prior art N-type MOS device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The above and other technical details, features and effects of thepresent invention will be will be better understood with regard to thedetailed description of the embodiments below, with reference to thedrawings. The drawings as referred to throughout the description of thepresent invention are for illustration only, to show the interrelationsbetween the apparatus and devices, but not drawn according to actualscale.

Two types of MOS devices and manufacturing methods thereof areillustrated below, as examples to show how the present invention reducesthe electric field, so that the hot carrier effect can be suppressed toreduce the substrate current.

In a first example, the present invention provides a MOS device 20having two recesses. In this embodiment, these two recesses are locatedin correspondence with the source and the drain of the MOS device 20,respectively (i.e., the two recesses are located at different sides ofthe gate, referring to FIGS. 2A-2G).

In a second example, the present invention provides a MOS device 30having only one recess. In this embodiment, the single one recess is atthe same side (the same side relative to the gate) as the drain of theMOS device 30 (referring to FIGS. 3A-3G).

Please refer to FIGS. 2A-2G, which show a first embodiment according tothe present invention, wherein an N-type MOS device is illustrated as anexample. In the figures, the vertical direction, lateral direction andlongitudinal direction are perpendicular to one another. As shown inFIG. 2A, a semiconductor substrate 11 is provided, in which are formed aP-type well 12 b and two isolation structures 12 al and 12 ar which aresubstantially parallel to each other in a longitudinal direction, todefine the device region 100. As shown in FIG. 2A, the semiconductorsubstrate 11 has an upper surface 11 a and a lower surface 11 b opposingto each other in the vertical direction. In one embodiment, theisolation structures 12 al and 12 ar are, for example but not limitedto, shallow trench isolation (STI) structures as shown in the figure. Inanother embodiment, the isolation structures 12 al and 12 ar are, forexample but not limited to, local oxidation of silicon (LOCOS)structures as shown in the figure.

Next, as shown in FIG. 2B, a dielectric layer 13 a and an electrodelayer 13 b are formed in the device region 100 on the upper surface 11 aof the semiconductor substrate 11 by lithography and etching.

The present invention is different from the prior art in that: as shownin FIG. 2C, the upper surface 11 a is etched in the longitudinaldirection to form a recess 29 a and a recess 29 b on the upper surface11 a of the semiconductor substrate 11. Preferably, the recess 29 a andthe recess 29 b are substantially parallel to each other in thelongitudinal direction. In contrast, in the prior art device formed bythe steps of FIGS. 1A-1E, no etching step is taken to form any recess onthe upper surface 11 a.

The recess 29 a and recess 29 b on the upper surface 11 a for examplecan be formed by: forming and patterning a mask (not shown) on the uppersurface 11 a of the semiconductor substrate 11, and performing anetching step according to the mask. The mask protects the regions otherthan the recess 29 a and the recess 29 b from etching. In oneembodiment, the etching step can be, for example but not limited to, HF(hydrogen fluoride) vapor etch. In another embodiment, the etching stepfor example can be BOE (buffered oxide etch) by immersing thesemiconductor substrate 11 in an acid tank. The mask can be, for examplebut not limited to, a photoresist layer patterned by lithography, or ahard mask made of a single or composite material, such as metal,silicide or amorphous silicon.

In one embodiment, the etching step of the semiconductor substrate 11can be, for example but not limited to, an isotropic etch by XeF2 gas.In another embodiment, an anisotropic etch step can be taken to etch thesemiconductor substrate 11, such as an ICP (Inductively Coupled Plasma)etch.

Next, as shown in FIG. 2D, the isolation structures 12 al and 12 ar andthe electrode layer 13 b are used as a mask, and N-type impurities aredoped into the semiconductor substrate 11 to form two N-type two lightlydoped diffusions (LDDs) 14 at different sides of the electrode layer 13b. The two N-type LDDs 14 for example can be formed by an ionimplantation process, which implants N-type impurities to the definedregions of the semiconductor substrate 11 (as shown by the dashed arrows14 a illustrated in this figure).

It is noteworthy that, as shown in FIG. 2D, from a cross-section view,the recess 29 a and the recess 29 b of this embodiment have respectivedepths Da and Db while the two LDDs 14 have a depth d (wherein “depth”is defined as a distance extending from the upper surface 11 a of thesemiconductor substrate 11 downward in the vertical direction), and thedepths Da and the depth Db are both deeper than the depth d. That is, inthis embodiment, Da>d, and, Db>d.

Next, as shown in FIG. 2E, a spacer layer 13 c is formed at the outersides of the dielectric layer 13 a and the electrode layer 13 b by, forexample but not limited to, thin film deposition and self-alignmentetching, so that a gate 13 is formed.

As shown in FIG. 2E, the recess 29 a and the recess 29 b of thisembodiment, as seen from the cross-section view, are at different sidesof the gate 13 and are lower than the dielectric layer 13 a of the gate13; and, the recess 29 a and the recess 29 b are located between thegate 13 and the isolation structures 12 al and 12 ar, respectively. Thatis, from the cross-section view, the recess 29 a of this embodiment isat one side of the gate 13 and lower than the dielectric layer 13 a ofthe gate 13, and is located between the gate 13 and the isolationstructures 12 al; the recess 29 b of this embodiment is at the otherside of the gate 13 and lower than of the dielectric layer 13 a of thegate 13, and is located between the gate 13 and the isolation structures12 ar.

As shown in FIG. 2E, in the lateral direction, the recess 29 a has aboundary 29 al closer to the gate 13 and a boundary 29 af farther fromthe gate 13. In this embodiment, the boundary 29 al of the recess 29 a,in the lateral direction, does not extend into an area P beneath thedielectric layer 13 a of the gate 13. Besides, the boundary 29 af of therecess 29 a, in the lateral direction, does not extend beneath theisolation structure 12 al. Moreover, in the lateral direction, therecess 29 b has a boundary 29 bf closer to the gate 13 and a boundary 29bl farther from the gate 13. Similarly, in this embodiment, the boundary29 bf of the recess 29 b, in the lateral direction, does not extend intothe area P beneath the dielectric layer 13 a of the gate 13, and theboundary 29 bl of the recess 29 b, in the lateral direction, does notextend beneath the isolation structure 12 ar.

As shown in FIG. 2E, the recess 29 a and the recess 29 b of thisembodiment, from the cross-section view, have depths Da and Dbrespectively, wherein “depth” is defined as a distance extending fromthe upper surface 11 a of the semiconductor substrate 11 downward in thevertical direction. The isolation structures 12 al and 12 ar of thisembodiment, from the cross-section view, have a depth H, which is alsodefined as a distance extending from the upper surface 11 a of thesemiconductor substrate 11 downward in the vertical direction. It isnoteworthy that, the depth Da and the depth Db are both not deeper thanthe depth H. That is, in one embodiment, Da≤H, and, Db≤H. In anotherembodiment, the depth Da and the depth Db are both not deeper than 5000angstrom (Å) (10⁻¹⁰ m). That is, in this embodiment, Da≤5000 angstrom(Å), and, Db≤5000 angstrom (Å).

Next, as shown in FIG. 2F, the source 25 a and the drain 25 b are formedunder the upper surface 11 a of the semiconductor substrate 11 in thedevice region 100, at different sides of the gate 13 by a lithographyprocess and an ion implantation process as shown by the dashed arrows25C illustrated in this figure, wherein the lithography process definesthe implantation regions by a photoresist mask together with aself-alignment effect provided by both or a part of the gate 13 and theisolation structures 12 a and 12 ar, and the ion implantation processimplants N-type impurities to form the source 25 a and the drain 25 bwhich are in contact with the two N-type LDDs 14 respectively.

It is noteworthy that the present invention is further different fromthe prior art in that: as shown in FIG. 2F, from the cross-section view,there is a vertical connection portion 251 (as shown by a dashed circlein FIG. 2F) formed by the implantation at the boundary 29 al of therecess 29 a in the vertical direction. This vertical connection portion251 connects the LDD 14 which is at the same side as the source 25 a tothe source 25 a. Besides, from the cross-section view, there is avertical connection portion 252 (as shown by another dashed circle inFIG. 2F) formed by the implantation at the boundary 29 bf of the recess29 b in the vertical direction. This vertical connection portion 252connects the LDD 14 which is at the same side as the drain 25 b to thedrain 25 b.

It is noteworthy that, as shown in FIG. 2F, from the cross-section view,the LDD 14 which is at the same side as the source 25 a is not laterallyin contact with the source 25 a. Besides, from the cross-section view,the LDD 14 which is at the same side as the drain 25 b is not laterallyin contact with the drain 25 b.

Next, as shown in FIG. 2G, a conductive material 27 a is filled into therecess 29 a, to form a contact. Also, a conductive material 27 b isfilled into the recess 29 b, to form a contact.

FIG. 2G shows a cross-section view of the MOS device 20 after the abovemanufacturing process steps are completed.

In this embodiment, because the two LDDs 14 are not laterally in contactwith the source 25 a and the drain 25 b, the amount of N-type impuritiesin the source 25 a which diffuse to the LDD 14 at the same side as thesource 25 a and the amount of N-type impurities in the drain 25 b whichdiffuse to the LDD 14 the same side as the drain 25 b are reduceddramatically. As a consequence, when an electric field is applied to theMOS device 20, the hot carrier effect will be suppressed, whereby thesubstrate current flowing from the drain to the semiconductor substrate11 due to the hot carrier effect is suppressed. Hence, the thresholdvoltage of the MOS device 20 will not deviate from the designed value.

Please refer to FIG. 2G in conjugation with FIGS. 1E, 4 and 5. FIG. 4shows a diagram of dopant concentration profile of the prior art N-typeMOS device 10 corresponding to FIG. 1E. FIG. 5 shows a diagram of dopantconcentration profile of the MOS device 20 corresponding to FIG. 2G. Asshown in FIG. 4, in the prior art N-type MOS device 10, the amount ofN-type impurities in the source 15 a which diffuse to the LDD 14connected to the source 15 a and the amount of N-type impurities in thedrain 15 b which diffuse to the LDD 14 connected to the drain 15 b arerelatively higher (as indicated by the hollow arrow in solid line shownin FIG. 4).

However, note that the present invention is different from the prior artin that: in the MOS device 20, the amount of N-type impurities in thesource 25 a which diffuse to the LDD 14 at the same side as the source25 a and the amount of N-type impurities in the drain 25 b which diffuseto the LDD 14 at the same side as the drain 25 b are dramaticallyreduced (as indicated by the hollow arrow in dashed line shown in FIG.5).

An N-type device is illustrated as an example in the above embodiment ofFIGS. 2A-2G, but the same concept is certainly applicable to a P-typedevice.

In the above-mentioned embodiment, the MOS device 20 includes tworecesses 29 a and 29 b, which are respectively at the same sides as thesource 25 a and as the drain 25 b of the MOS device 20.

In another embodiment, the present invention provides another MOS device30, which includes only one recess instead of two recesses. Inparticular, this single one recess is at the same side as the drain ofthe MOS device 30.

Please refer to FIGS. 3A-3G, which show this embodiment according to thepresent invention, wherein, similarly, an N-type MOS device isillustrated as an example.

The manufacturing steps or the structure of this embodiment issubstantially the same as the manufacturing steps or the structure ofthe above-mentioned embodiment, but is different in that: theabove-mentioned MOS device 20 includes two recesses 29 a and 29 b,whereas, the MOS device 30 of this embodiment includes only one recess39 b. Therefore, the manufacturing steps in this embodiment which aresimilar to the manufacturing steps of the above-mentioned embodimentwill not be redundantly repeated here, and only the distinct features ofthis embodiment will be described below.

Please refer to FIG. 3C, the present invention is different from theprior art in that: as shown in FIG. 3C, the upper surface 11 a is etchedin the longitudinal direction to form a recess 39 b on the upper surface11 a of the semiconductor substrate 11. In contrast, in the prior artdevice formed by the steps of FIGS. 1A-1E, no etching step is taken toform any recess on the upper surface 11 a.

Next, please refer to FIG. 3D. It is noteworthy that, as shown in FIG.3D, the recess 39 b of this embodiment, from a cross-section view, has adepth Db, which is defined as a distance extending from the uppersurface 11 a of the semiconductor substrate 11 downward in the verticaldirection. The LDD 14 r (i.e., the LDD 14 r which is at the same side asthe drain 35 b, as shown in FIG. 3F), from the cross-section view, has adepth d, which is also defined as a distance extending from the uppersurface 11 a of the semiconductor substrate 11 downward in the verticaldirection. It is noteworthy that, the depth Db is deeper than the depthd. In other words, in this embodiment, Db>d.

In addition, it is noteworthy that the recess 39 b of this embodiment,viewing from the cross-section view of FIG. 3E, is at one side of thegate 13 and lower than the dielectric layer 13 a of the gate 13. Thatis, the recess 39 b of this embodiment, viewing from the cross-sectionview, is at the same side as the drain 35 b (as shown in FIG. 3F) and islocated between the gate 13 and the isolation structure 12 ar.

As shown in FIG. 3E, the recess 39 b, in the lateral direction, has aboundary 39 bf closer to the gate 13 and a boundary 39 bl farther fromthe gate 13. In this embodiment, the boundary 39 bf of the recess 39 b,in the lateral direction, does not extend into an area P beneath thedielectric layer 13 a of the gate 13. The boundary 39 bl of the recess39 b, in the lateral direction, does not extend beneath the isolationstructure 12 ar.

As shown in FIG. 3E, the recess 39 b of this embodiment, from thecross-section view, has a depth Db, which is defined as a distanceextending from the upper surface 11 a of the semiconductor substrate 11downward in the vertical direction. The isolation structure 12 ar ofthis embodiment, from the cross-section view, has a depth H, which isalso defined as a distance extending from the upper surface 11 a of thesemiconductor substrate 11 downward in the vertical direction. It isnoteworthy that the depth Db of the recess 39 b is not deeper than thedepth H of the isolation structure 12 ar. In other words, in oneembodiment, Db≤H. In another embodiment, the depth Db of the recess 29 bis not deeper than 5000 angstrom (Å) (10⁻¹⁰ m). That is, in thisembodiment, Db≤5000 angstrom (Å).

It is noteworthy that the present invention is further different fromthe prior art in that: as shown in FIG. 3F, from the cross-section view,there is a vertical connection portion 352 formed by the implantation atthe boundary 39 bf of the recess 39 b in the vertical direction. Thisvertical connection portion 352 connects the LDD 14 r which is at thesame side as the drain 35 b to the drain 35 b.

It is noteworthy that, as shown in FIG. 3F, from the cross-section view,the LDD 141 which is at the same side as the source 15 a is laterally incontact with the source 15 a. On the other hand, from the cross-sectionview, the LDD 14 r which is at the same side as the drain 35 b is notlaterally in contact with the drain 35 b.

Next, as shown in FIG. 3G, a conductive material 37 b is filled into therecess 39 b, to form a contact.

FIG. 3G shows a cross-section view of the MOS device 30 after the abovemanufacturing process steps are completed.

In this embodiment, because the LDD 14 r which is at the same side asthe drain 35 b is not laterally in contact with the drain 35 b, theamount of N-type impurities in the drain 35 b which diffuse to the LDD14 r are reduced dramatically. As a consequence, when an electric fieldis applied to the MOS device 30, the hot carrier effect will besuppressed, whereby the substrate current flowing from the drain to thesemiconductor substrate 11 due to hot carrier effect is suppressed.Hence, the threshold voltage of the MOS device 30 will not deviate fromthe designed value.

Please refer to FIG. 3G in conjugation with FIGS. 4 and 6. FIG. 6 showsa diagram of dopant concentration profile of the MOS device 30corresponding to FIG. 3G. As shown in FIG. 4, in the prior art N-typeMOS device 10, the amount of N-type impurities in the source 15 a whichdiffuse to the LDD 14 connected to the source 15 a and the amount ofN-type impurities in the drain 15 b which diffuse to the LDD 14connected to the drain 15 b are relatively higher (as indicated by thehollow arrow in solid line shown in FIG. 4).

However, note that the present invention is different from the prior artin that: in the MOS device 30, the amount of N-type impurities in thedrain 35 b which diffuse to the LDD 14 r are dramatically reduced (asindicated by the hollow arrow in dashed line shown in FIG. 6).

An N-type device is illustrated as an example in the above embodiment ofFIGS. 3A-3G, but the same concept is certainly applicable to a P-typedevice.

Please refer to FIG. 7, which shows that the present invention, ascompared to the prior art, is capable of reducing substrate current. Thepresent invention provides two types of MOS devices and correspondingmanufacturing methods thereof: the MOS device 20 having two recesses andthe MOS device 30 having only one recess. According to FIG. 7, it isapparent that the MOS devices 20 and 30 of the present invention, ascompared to the prior art, can reduce the substrate current by 20% ormore. Note that the prior art device does not have any recess, i.e., thedepth of the recess of the prior art device is 0, and in FIG. 7,different data points of the prior art device do not mean that the priorart device has any recess, but are provided for easier comparison of thesubstrate current only.

Further, please refer to FIG. 8, which shows ON-resistances of the MOSdevices 20 and 30 according to the present invention and theON-resistance of the prior art device. As shown in FIG. 8, the MOSdevices 20 and 30 of the present invention can reduce the substratecurrent without compromising the ON-resistance. According to FIG. 8, theON-resistance of the MOS devices 20 and the ON-resistance of the MOSdevices 30 of the present invention are comparable to the ON-resistanceof the prior art, showing that the MOS devices 20 and 30 of the presentinvention can reduce the substrate current without significantlyaffecting the ON-resistance.

The present invention has been described in considerable detail withreference to certain preferred embodiments thereof. It should beunderstood that the description is for illustrative purpose, not forlimiting the scope of the present invention. An embodiment or a claim ofthe present invention does not need to achieve both the objectives oradvantages of the present invention. The title and abstract are providedfor assisting searches but not for limiting the scope of the presentinvention. Those skilled in this art can readily conceive variations andmodifications within the spirit of the present invention. For example,other manufacturing process steps or structures which do not affect thecharacteristics of the devices, such as a deep-well region, etc., can beadded. For another example, the lithography process is not limited tophotolithography; it can be electron beam lithography, X-ray lithographyor other methods. It is not limited for each of the embodimentsdescribed hereinbefore to be used alone; under the spirit of the presentinvention, two or more of the embodiments described hereinbefore can beused in combination. For example, two or more of the embodiments can beused together, or, a part of one embodiment can be used to replace acorresponding part of another embodiment. In view of the foregoing, thespirit of the present invention should cover both such and othermodifications and variations, which should be interpreted to fall withinthe scope of the following claims and their equivalents.

1. A metal oxide semiconductor (MOS) device, comprising: a semiconductorsubstrate, in which are formed a plurality of isolation structuressubstantially parallel to each other in a longitudinal direction, todefine a device region, the semiconductor substrate having an uppersurface and a lower surface opposing to each other in a verticaldirection, wherein a first recess and a second recess are formed on theupper surface, the first recess and the second recess beingsubstantially parallel to each other in the longitudinal direction; agate, which is in the device region and on the upper surface of thesemiconductor substrate; a source and a drain, which are at differentsides of the gate, respectively; two lightly doped diffusions (LDDs)having a same conductive type as the source and the drain, which are atdifferent sides of the gate, respectively; two vertical connectionportions which connect the two LDDs to the source and the drain,respectively; and contacts formed by a conductive material in the firstrecess and the second recess, respectively, wherein, viewing from across-section view, the first recess and the second recess are atdifferent sides of the gate and are located between the gate and one ofthe isolation structures, respectively; wherein, the first recess, in alateral direction, has a first boundary closer to the gate and a secondboundary farther from the gate, and the second recess, in the lateraldirection, has a third boundary closer to the gate and a fourth boundaryfarther from the gate, the vertical connection portion of the sourcebeing formed at the first boundary of the first recess in the verticaldirection, while the vertical connection portion of the drain beingformed at the third boundary of the second recess in the verticaldirection; wherein, the first boundary and the third boundary, in thelateral direction, do not extend beneath the gate; wherein, from thecross-section view, the first recess and the second recess haverespective depths, and the two LDDs have a depth, and the depths of thefirst recess and the second recess are both deeper than the depth of thetwo LDDs; wherein, depth is defined as a distance extending from theupper surface of the semiconductor substrate downward in the verticaldirection; and wherein, the longitudinal direction, vertical directionand lateral direction are perpendicular to one another.
 2. The MOSdevice of claim 1, wherein the two LDDs are not laterally in contactwith the source and the drain, respectively.
 3. The MOS device of claim1, wherein the respective depths of the first recess and the secondrecess are not deeper than a depth of the isolation structures.
 4. TheMOS device of claim 1, wherein the respective depths of the first recessand the second recess are not deeper than 5000 Å.
 5. The MOS device ofclaim 1, wherein the isolation structures include local oxidation ofsilicon (LOCOS) structures or shallow trench isolation (STI) structures.6. A metal oxide semiconductor (MOS) device, comprising: a semiconductorsubstrate, in which are formed a plurality of isolation structuressubstantially parallel to each other in a longitudinal direction, todefine a device region, the semiconductor substrate having an uppersurface and a lower surface opposing to each other in a verticaldirection, wherein a recess is formed on the upper surface; a gate,which is in the device region and on the upper surface of thesemiconductor substrate; a source and a drain, which are at differentsides of the gate, respectively; two lightly doped diffusions (LDDs)having a same conductive type as the source and the drain, which are atdifferent sides of the gate, respectively; a vertical connection portionwhich connects one of the two LDDs to the drain; and a contacts formedby a conductive material in the recess, wherein, viewing from across-section view, the recess is at one side of the gate and is locatedbetween the gate and one of the isolation structures; wherein, therecess, in a lateral direction, has a first boundary closer to the gateand a second boundary farther from the gate, the vertical connectionportion being formed at the first boundary of the recess in the verticaldirection, and wherein the first boundary, in the lateral direction,does not extend beneath the gate; wherein the recess has a depth whichis deeper than a depth of one of the two LDDs which is at the same sideas the drain; wherein, depth is defined as a distance extending from theupper surface of the semiconductor substrate downward in the verticaldirection; and wherein, the longitudinal direction, vertical directionand lateral direction are perpendicular to one another.
 7. The MOSdevice of claim 6, wherein one of the two LDDs which is at the same sideas the drain is not laterally in contact with the drain, and whereinanother one of the two LDDs which is at the same side as the source islaterally in contact with the source.
 8. The MOS device of claim 6,wherein the depth of the recess is not deeper than a depth of theisolation structures.
 9. The MOS device of claim 6, wherein the depth ofthe recess is not deeper than 5000 Å.
 10. A manufacturing method of ametal oxide semiconductor (MOS) device, comprising the steps of:providing a semiconductor substrate, and forming a plurality ofisolation structures substantially parallel to each other in alongitudinal direction of the semiconductor substrate to define a deviceregion, the semiconductor substrate having an upper surface and a lowersurface opposing to each other in a vertical direction; forming a gatein the device region and on the upper surface of the semiconductorsubstrate; etching the upper surface in the longitudinal direction, sothat a first recess and a second recess are formed on the upper surface,wherein the first recess and the second recess are substantiallyparallel to each other in the longitudinal direction; forming twolightly doped diffusions (LDDs) having a same conductive type as thesource and the drain at different sides below the gate, respectively;forming a source and a drain at different sides of the gate; forming twovertical connection portions which connect the two LDDs to the sourceand the drain, respectively; and filling a conductive material into thefirst recess and the second recess, respectively, to form contacts;wherein, viewing from a cross-section view, the first recess and thesecond recess are at different sides of the gate and are located betweenthe gate and one of the isolation structures, respectively; wherein, thefirst recess, in a lateral direction, has a first boundary closer to thegate and a second boundary farther from the gate, and the second recess,in the lateral direction, has a third boundary closer to the gate and afourth boundary farther from the gate, the vertical connection portionof the source being formed at the first boundary of the first recess inthe vertical direction, while the vertical connection portion of thedrain being formed at the third boundary of the second recess in thevertical direction; wherein, the first boundary and the third boundary,in the lateral direction, do not extend beneath the gate; wherein, fromthe cross-section view, the first recess and the second recess haverespective depths, and the two LDDs have a depth, and the depths of thefirst recess and the second recess are both deeper than the depth of thetwo LDDs; wherein, depth is defined as a distance extending from theupper surface of the semiconductor substrate downward in the verticaldirection; and wherein, the longitudinal direction, vertical directionand lateral direction are perpendicular to one another.
 11. Themanufacturing method of the MOS device of claim 10, wherein the two LDDsare not laterally in contact with the source and the drain,respectively.
 12. The manufacturing method of the MOS device of claim10, wherein the respective depths of the first recess and the secondrecess are not deeper than a depth of the isolation structures.
 13. Themanufacturing method of the MOS device of claim 10, wherein therespective depths of the first recess and the second recess are notdeeper than 5000 Å.
 14. A manufacturing method of a metal oxidesemiconductor (MOS) device, comprising the steps of: providing asemiconductor substrate, and forming a plurality of isolation structuressubstantially parallel to each other in a longitudinal direction of thesemiconductor substrate to define a device region, the semiconductorsubstrate having an upper surface and a lower surface opposing to eachother in a vertical direction; forming a gate in the device region andon the upper surface of the semiconductor substrate; etching the uppersurface in the longitudinal direction, so that a recess is formed on theupper surface; forming two lightly doped diffusions (LDDs) having a sameconductive type as the source and the drain at different sides below thegate, respectively; forming a source and a drain at different sides ofthe gate; forming a vertical connection portion which connects one ofthe two LDDs to the drain; and filling a conductive material into therecess to form a contact; wherein, viewing from a cross-section view,the recess is at one side of the gate and is located between the gateand one of the isolation structures; wherein, the recess, in a lateraldirection, has a first boundary closer to the gate and a second boundaryfarther from the gate, the vertical connection portion being formed atthe first boundary of the recess in the vertical direction, and whereinthe first boundary, in the lateral direction, does not extend beneaththe gate; wherein the recess has a depth which is deeper than a depth ofone of the two LDDs which is at the same side as the drain; wherein,depth is defined as a distance extending from the upper surface of thesemiconductor substrate downward in the vertical direction; and wherein,the longitudinal direction, vertical direction and lateral direction areperpendicular to one another.
 15. The manufacturing method of the MOSdevice of claim 14, wherein one of the two LDDs which is at the sameside as the drain is not laterally in contact with the drain, andwherein another one of the two LDDs which is at the same side as thesource is laterally in contact with the source.
 16. The manufacturingmethod of the MOS device of claim 14, wherein the depth of the recess isnot deeper than a depth of the isolation structures.
 17. Themanufacturing method of the MOS device of claim 14, wherein the depth ofthe recess is not deeper than 5000 Å.